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  integrated circuits sl1 ics30 01 bumped i?code 1 label ic (ic with bumps) chip specification product specification revision 2.2 public january 2005 philips semiconductors
1 chip specification rev. 2.2 january 2005 sl044022.doc / b public page 2 of 24 1 contents 1 contents 2 2 definitions 4 2.1 life support applications ................................ ................................ ................................ .... 4 2.2 abbreviations ................................ ................................ ................................ ........................ 4 3 scope 5 4 ordering information 5 5 functional description 6 5.1 basic features ................................ ................................ ................................ ....................... 6 5.2 block diagram of the ic ................................ ................................ ................................ ....... 6 5.3 memory organisation ................................ ................................ ................................ ........... 7 5.3.1 serial number ................................ ................................ ................................ .................. 7 5.3.2 write access conditions ................................ ................................ ................................ .. 7 5.3.3 special functions (eas/quiet) ................................ ................................ ..................... 8 5.3.4 family code and application identifier ................................ ................................ ........... 8 5.3.5 configuration of delivered ics ................................ ................................ ......................... 9 6 bump specifications 10 7 mechanical die specifications 11 8 mechanical wafer specifications 12 8.1 wafer status ................................ ................................ ................................ ........................ 12 8.2 backside treatment ................................ ................................ ................................ ............ 12 9 documentation 13 9.1 delivery documentation ................................ ................................ ................................ ..... 13 9.2 fail-die identification ................................ ................................ ................................ ......... 13 9.2.1 ink dot specification ................................ ................................ ................................ ..... 13 9.2.2 wafer mapping ................................ ................................ ................................ ............... 13 10 quality assurance 14 10.1 electrical acceptance test ................................ ................................ ............................. 14 10.2 visual inspection ................................ ................................ ................................ ............. 14 10.2.1 after wafer final test ................................ ................................ ................................ 14 10.2.2 after sawing (film frame carrier) ................................ ................................ ............ 14 11 packing 15 11.1 storage recommendations ................................ ................................ ............................. 15
1 chip specification rev. 2.2 january 2005 sl044022.doc / b public page 3 of 24 11.2 possible forms of delivery ................................ ................................ ............................. 15 11.2.1 packing of sawn wafers ................................ ................................ ............................. 15 12 handling recommendations 16 12.1 assembly ................................ ................................ ................................ ........................... 16 13 coil specification 16 14 electrical specifications 17 15 hints for label ic encapsulation 18 15.1 protection against visible light ................................ ................................ ..................... 18 15.2 protection against uv light ................................ ................................ ........................... 18 15.3 resistance to x-rays ................................ ................................ ................................ ....... 18 16 inlet/label characterisation and test 19 16.1 characterisation of the inlet/label ................................ ................................ ................ 19 16.2 final test of the inlet/label ................................ ................................ ........................... 19 17 appendix a: die plan 20 18 appendix b: cluster plan 21 19 appendix c: cluster map 22 20 revision history 23
1 chip specification rev. 2.2 january 2005 sl044022.doc / b public page 4 of 24 2 definitions data sheet status objective specification this data sheet contains target or goal specifications for product development. preliminary specification this data sheet contains preliminary data; supplementary data may be published later. product specification this data sheet contains final product specifications. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics section of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the specification. 2.1 life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so on their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. 2.2 abbreviations ascii american standard code for information interchange csc cyclic redundancy check ean european article number eas electronic article surveillance eeprom electrically erasable and programmable read only memory emi electromagnetic interference etsi european telecommunications standards institute fcc federal communications commission ffc film frame carrier hex value in hexadecimal notation ic integrated circuit ism industrial, scientific, medical lsb least significant bit or byte msb most significant bit or byte mtbf mean time between failure pcb printed circuit board pcm process control module rf radio frequency rms root mean square snr serial number uv ultraviolet
1 chip specification rev. 2.2 january 2005 sl044022.doc / b public page 5 of 24 3 scope this specification describes the electrical, physical and dimensional properties of unsawn and sawn wafers on ffc of i?code1 label ics on a philips 6c15 idfw process and is the base for delivery of tested i?code1 label ics. general recommendations are given for storage, handling and processing of wafers as well as assembly of labels. reference documents: mil-std 883d method 3023 mil-std 883d method 3015 snw-fq-627 pictoh-qs007 general sp ecification for 6? wafer general quality specification i?code1 label ic, coil design guide this product specification is valid for vcol1v0 from mask revision p/b upwards. 4 ordering information following ordering options are available: type name description ordering code sl1 ics30 01w/n4d sawn wafer on foil (ffc), 150 m, inked and mapped, with bumps 9352 644 67005
1 chip specification rev. 2.2 january 2005 sl044022.doc / b public page 6 of 24 5 functional description 5.1 basic features the i?code1 label ic is a dedicated chip for intelligent label applications like logistics and retail (including eas) as well as baggage and parcel identification in airline business and mail services. the i?code system offers the possibility of operating labels simultaneously in the field of the reader antenna ( anticollision ). it is designed for long range applications. whenever connected to a very simple and cheap type of antenna (as a result of the 13.56 mhz carrier frequency) made out of a few windings printed, winded, etched or punched coil the i?code1 label ic can be operated without line of sight up to a distance of 1.5 m (gate width). 5.2 block diagram of the ic the label requires no internal power supply. its contactless interface generates the power supply and the system clock via the resonant circuitry by inductive coupling to the reader. the interface also demodulates data that are transmitted from the reader to the i?code label, and modulates the electromagnetic field for data transmission from the i?code label to the reader. data are stored in a non-volatile memory (eeprom). the eeprom has a memory capacity of 512 bit and is organised in 16 blocks consisting of 4 bytes each (1 block = 32 bits). the higher 12 blocks contain user data and the lowest 4 blocks contain the serial number, the write access conditions a nd some configuration bits.
1 chip specification rev. 2.2 january 2005 sl044022.doc / b public page 7 of 24 5.3 memory organisation the 512 bit eeprom memory is divided into 16 blocks. a block is the smallest access unit. each block consists of 4 bytes (1 block = 32 bits). bit 0 in each byte represents the least significant bit (lsb) and bit 7 the most significant bit (msb), respectively. byte 0 byte 1 byte 2 byte 3 block 0 snr0 snr1 snr2 snr3 serial number (lower bytes) block 1 snr4 snr5 snr6 snr7 serial number (higher bytes) block 2 f0 ff ff ff write access conditions block 3 x x x x special functions (eas/quiet) block 4 x x x x family code/application identifier/user data block 5 x x x x user data block 6 x x x x : block 7 x x x x : block 8 x x x x : block 9 x x x x : block 10 x x x x : block 11 x x x x : block 12 x x x x : block 13 x x x x : block 14 x x x x : block 15 x x x x user data the values (in hexadecimal notation) shown in the table above are stored in the eeprom after the wafer production process. the contents of blocks marked with ? x ? in the table are not defined at delivery. 5.3.1 serial number the unique 64 bit serial number is stored in blocks 0 and 1 and is programmed during the production process. snr0 in the table represents the least significant byte and snr7 the most significant byte, respectively. 5.3.2 write access conditions the write access condition bits in block 2 determine the write access conditions for each of the 16 blocks. these bits can be set only to 0 (and never be changed to 1), i.e. already write protected blocks can never be written to from this moment on. this is also true for block 2. if this block is set into write protected state by clearing of bits 4 and 5 at byte 0, no further changes in write access conditions are possible. byte 0 byte 1 byte 2 byte 3 a msb lsb a a msb lsb a a msb lsb a a msb lsb a block 2: write access conditions | 1|1 | | 1|1 | | 0 | 0 | | 0 | 0 | | 1|1 | | 1|1 | | 1|1 | | 1|1 | | 1|1 | | 1|1 | | 1|1 | | 1|1 | | 1|1 | | 1|1 | | 1|1 | | 1|1 | for block 3 2 1 0 7 6 5 4 11 10 9 8 15 14 13 12 special funct. write access serial number user data ..... ..... ..... ..... ..... ..... ..... ..... ..... ..... user data the ones in the 16 pairs of bits have to be cleared together if the corresponding block is wanted to be write protected forever ( 1|1 write access enabled, 0|0 write access disabled). writing of bit pairs 1|0 or 0|1 to block 2 is not allowed! it is extremely important to be particularly careful when clearing the write access bits in block 2, as you can lose write access to all of the blocks on the label in case of a mistake. of course you can use this feature to put the label into a hardware write protected state!
1 chip specification rev. 2.2 january 2005 sl044022.doc / b public page 8 of 24 5.3.3 special functions (eas/quiet) the special functions block holds the two eas bits (electronic article surveillance mode active the label answers at an eas command) as well as the two quiet bits (quiet mode enabled the label is permanently disabled but can be activated again with the ?reset quiet bit? command). the state of quiet mode does not influence the functionality of the eas command. the remaining 28 bits (greyed ? x ? in the following figure) are reserved for future use. byte 0 byte 1 byte 2 byte 3 a msb lsb a block 3: special functions | x|x | | x|x | | q|q | | e|e | | x|x | | x|x | | x|x | | x|x | | x|x | | x|x | | x|x | | x|x | | x|x | | x|x | | x|x | | x|x | quiet eas quiet: q|q = 1|1 quiet mode enabled q|q = 0|0 quiet mode disabled eas: e|e = 1|1 eas mode enabled e|e = 0|0 eas mode disabled writing of bit pairs 1|0 or 0|1 to block 3 is not allowed! changing of the write access control or configuration must be done in secure environment (by reading the current value of the block and masking in the new values for bit positions that may be changed). the label must not be moved out of the communication field of the antenna during writing! we recommend to put the label close to the antenna and not to remove it during operation. 5.3.4 family code and application identifier the i?code system offers the feature to use (independently) family codes and/or application identifiers with some reader commands (this allows for example the creation of ?label families?). these two 8-bit values are located at the beginning of user data (block 4) as shown in the following figure and are only evaluated if the corresponding bytes at the reader commands are unequal to zero. only if both corresponding parameter bytes at the reader commands anticollision/select, eas and unselected read, respectively, are set to zero, block 4 can be used for user data without restriction. byte 0 byte 1 byte 2 byte 3 a msb lsb a a msb lsb a block 4: family code, application id | x | x | | x | x | | x | x | | x | x | | x | x | | x | x | | x | x | | x | x | | x | x | | x | x | | x | x | | x | x | | x | x | | x | x | | x | x | | x | x | family code application id the greyed bytes are for customer usage as well as the remaining blocks (5 to 15) are.
1 chip specification rev. 2.2 january 2005 sl044022.doc / b public page 9 of 24 5.3.5 configuration of delivered ics i?code1 label ics are delivered with the following configuration by philips: serial number is unique and read only write access conditions allow to change all blocks (with the exception of both serial number blocks) status of eas mode is not defined status of quiet mode is not defined family code and application identifier are not defined user data memory is not defined as the status of quiet mode is not defined at delivery, the first command to be executed on the i?code1 label ic should be the reset quiet bit command! note: due to the fact that the eas mode is undefined at delivery, the eas mode shall be set (enable or disable) according to your application requirements during the test or initialisation phase.
1 chip specification rev. 2.2 january 2005 sl044022.doc / b public page 10 of 24 6 bump specifications bump material: > 99.9% pure au bump hardness: 35 ? 80 hv 0.005 bump shear strength: > 70 mpa bump height: 18 m bump height uniformity: within a die 2 m within a wafer 3 m wafer to wafer 4 m bump flatness: 1.5 m bump size (bond pad): la, lb 144 m x 164 m bump size: (test pad) test, vss 104 m x 104 m ( the test pads are electrically neutral at sawn wafers) bump size variation: 5 m under bump metallisation: sputtered tiw
1 chip specification rev. 2.2 january 2005 sl044022.doc / b public page 11 of 24 7 mechanical die specifications designation: vcol1v0 visible on each die location see attached die plan bump location: see attached die plan die dimensions ( incl. 80 m scribe line) : 1460 m x 1490 m die dimensions (excl. scribe line) : 1380 m x 1410 m tolerances for sawn dies: 25 m pin identification: see attached die plan passivation attributes: the passivation is a protection of active areas against dust (particles) and humidity and general contamination (whole surface of the chip except for the bond pads). top side passivation material: oxynitride passivation thickness: 1.6 m due to the glass-like physical properties careful handling and processing is required. available die backside treatment: etched
1 chip specification rev. 2.2 january 2005 sl044022.doc / b public page 12 of 24 8 mechanical wafer specifications for further information as described in the following chapters please refer to the following philips documents: dicing guidelines for thin wafers (< 200 m) general specification for 6? wafer in case of doubt or inconsistency with the following chapters the above mentioned specifications are applicable. designation: each wafer is laser scribed with batch and wafer number wafer diameter: 150 mm (6") 0.3 mm die separation lane width: 80 m (scribe line) electrical connection of substrate: vss geometrically complete dies per wafer: approx. 7400 orientation of dies relat. to wafer flat: see attached cluster map position of test structures: see attached cluster map wafer layout: see attached cluster map batch size: 24 wafers process: 6c15 idfw 8.1 wafer status tested, sawn on ffc minimum yield per lot: 30 % 8.2 backside treatment wafers can be delivered with a thickness of 150 m m 15 m (approx. 6 mil) grinded and etched backside.
1 chip specification rev. 2.2 january 2005 sl044022.doc / b public page 13 of 24 9 documentation 9.1 delivery documentation each wafer container and each larger shipment container is individually marked with the identification information as follows: diffusion batch number (wafer lot number) part designation (type) with revision number ordering code (see chapter 4) date code of lot acceptation good die quantity the print out of the final test results is attached to the packing and contains the good die quantity related to every wafer number. 9.2 fail-die identification every die is electrically tested according to data sheet. identification of chips with electrical parameters not conform with the data sheet is done by inking and wafer mapping (all dies at wafer periphery are identified as 'fail'). 9.2.1 ink dot specification diameter: min. 0.4 mm height: max. 20 m colour: black position: central third of die (x, y direction) attributes: opaque, water resistant note: uncompleted dies with an area < 95 % (wafer periphery) are not inked! 9.2.2 wafer mapping wafer mapping for failed die identification is available on floppy-disk. format: ibis format on 3.5 2 floppy-disk
1 chip specification rev. 2.2 january 2005 sl044022.doc / b public page 14 of 24 10 quality assurance 10.1 electrical acceptance test the electrical acceptance test is performed in line (?sampling on the fly?) according to the test specifications. sampling plan: according general quality specification 10.2 visual inspection 10.2.1 after wafer final test performed according document snw-fq-627. sampling plan: according general quality specification 10.2.2 after sawing (film frame carrier) performed according document pictoh-qs007. sampling plan (3 wafers per lot): accept 0/3
1 chip specification rev. 2.2 january 2005 sl044022.doc / b public page 15 of 24 11 packing the packing for shipment of wafers has to protect the wafers against shock, severe impact, dust and electrostatic discharge. the packing of unsawn wafers or sawn wafers is done according to philips ?general specification for 6? wafer?. 11.1 storage recommendations sawn wafers should be kept in their original packing whilst in storage. recommended storage conditions: temperature: 15 ... 25 c climate atmosphere: 40 ... 60 % r.h. or dried n 2 (only unsawn wafers!) duration of storage: max. 6 months deviating requirements have to be arranged between customer and philips semiconductors. 11.2 possible forms of delivery 11.2.1 packing of sawn wafers delivery form: film frame carrier (standard philips carrier type p7) foil thickness: 0.55 ... 0.85 mm foil material: sticky foil
1 chip specification rev. 2.2 january 2005 sl044022.doc / b public page 16 of 24 12 handling recommendations 12.1 assembly the bumped i?code1 ic enables flip chip assembly using acf (anisotropic conductive film), acp (anisotropic conductive pastes) and conductive glues. 13 coil specification the i?code1 label ic has to be connected at pads la, lb to a coil characterised by its electrical parameters according to philips application note ?sl1 ics30 01 i?code1 label ic, coil design guide?.
1 chip specification rev. 2.2 january 2005 sl044022.doc / b public page 17 of 24 14 electrical specifications absolute maximum ratings 1, 2 symbol parameter test conditions rating unit t stg storage temperature range - 55 to + 140 c t j junction temperature - 55 to + 140 c v esd esd voltage immunity mil-std-883d, method 3015.7, human body model 2 kv peak i max la-lb maximum input peak current 60 ma peak notes: 1. stresses above those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any conditions other than those described in the operating conditions and electrical characteristics section of this specification is not implied. 2. this product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static charge. nonetheless, it is suggested that conventional precautions be taken to avoid applying greater than the rated maxima. operating conditions symbol parameter test conditions min typ 1 max unit t amb operating ambient temperature - 25 + 70 c t j op operating junction temperature - 25 + 85 c i la-lb input current 30 ma rms v la-lb rd minimum supply voltage 2 for read/eas standard mode 3.1 3.7 v peak v la-lb wr minimum supply voltage 2 for write standard mode 3.6 4.1 v peak v la-lb fm minimum supply voltage 2 for read/eas/write fast mode 5.2 6.5 v peak f op operating frequency 3 13.553 13.560 13.567 mhz notes: 1. typical ratings are not guaranteed. these values listed are at room temperature. 2. the voltage between la and lb is limited by the on-chip voltage limitation circuitry (corresponding to parameter i la-lb ). 3. bandwidth limitation (7 khz) according to ism band regulations. electrical characteristics t amb = - 25 to +70 c symbol parameter test conditions min typ 1 max unit c res input capacitance between la - lb 2 v la-lb = 2 v rms 22.3 23.5 24.7 pf p min minimum operating supply power 3 v la-lb = 2 v rms 200 w m min minimum modulation of rf voltage for demodulator response m v - v v + v max min max min = 10 14 % m max maximum modulation of rf voltage for demodulator response m v - v v + v max min max min = 30 % t p sm modulation pulse length of rf voltage 4 standard mode, m 3 10 % 3.54 5.31 5 9.44 s t p fm modulation start-pulse length of rf voltage 4 fast mode, m 3 10 % 15.34 17.11 5 21.24 s t d demodulator response time m 3 10 % 0.1 0.8 2.4 s r mod modulator on resistance i la-lb = 30 ma 50 115 250 w t ret eeprom data retention t amb 55 c 10 years n write eeprom write endurance 100 000 cycles notes: 1. typical ratings are not guaranteed. these values listed are at room temperature. 2. measured with an hp4285a lcr meter at 13.56 mhz. 3. including losses in resonant capacitor and rectifier. 4. the given values are derived from the 13.56 mhz system frequency. 5. recommended values for pulse duration generated at the read/write device.
1 chip specification rev. 2.2 january 2005 sl044022.doc / b public page 18 of 24 15 hints for label ic encapsulation 15.1 protection against visible light as a result of the ultra low power design of the i?code1 label ic some analogue circuits on the chip are light sensitive. this means that common sun light can impact the operation of the label if the chip is not protected against visible light radiation. measurements have shown that a radiation of e max = 60 w/m 2 (spectrum: 400 to 1000 nm) causes a reduced operating range of the plain chip. measurements of direct sunlight in summer deliver values up to 260 w/m 2 . to ensure proper operation an expected minimum radiation reduction factor of approx. 9 (2 x 260/60 = 8.7) must be provided by the encapsulation. that means specia l care has to be taken to ensure a sufficient light protection of the i?code1 label ic (e.g. non translucent encapsulation or underfiller , ...) according to application requirements. 15.2 protection against uv light an eeprom memory, as it is also used in the i?code1 label ic, has some principle sensitivity to uv light (applies to eeprom-technology in general). thus strong uv exposure in the production of inlets/labels has to be avoided. uv protection has to be ensured using appropriate assembly methods. 15.3 resistance to x-rays x-ray exposure on comparable philips ics (with even smaller feature size) caused neither an long term influence on the behaviour of the ics nor on the data retention of the eeproms.
1 chip specification rev. 2.2 january 2005 sl044022.doc / b public page 19 of 24 16 inlet/label characterisation and test 16.1 characterisation of the inlet/label the parameters recommended to be characterised for the inlet/label are: parameter symbol conditions resonant frequency f res resonant frequency @ t amb = 22 c @ b th no command transmitted to the inlet/label label generates no response no modulation threshold value for unselected read command (standard mode) b th unselected read command ok threshold value for write command (standard mode) b wr write (and verifying read) command ok 16.2 final test of the inlet/label basic flow for production and test: 1. production of wafer 2. bumping of wafer 3. testing of dies on wafer 4. writing of serial numbers and pre-configuration 5. sawing of wafer 6. assembly of inlets/labels 7. final test of inlets/labels 8. writing of customer data to detect damage of eeprom cells during production of inlets/labels a final test of the eeprom after assembly of the inlet/label is recommended. this is necessary to achieve lowest failure rates.
1 chip specification rev. 2.2 january 2005 sl044022.doc / b public page 20 of 24 17 appendix a: die plan measuring unit: m the two test pads (test and vss) are electrically neutral at sawn wafers!
1 chip specification rev. 2.2 january 2005 sl044022.doc / b public page 21 of 24 18 appendix b: cluster plan measuring unit: mm
1 chip specification rev. 2.2 january 2005 sl044022.doc / b public page 22 of 24 19 appendix c: cluster map the three black lines show the position of the pcm structures on the 6 inch wafer!
1 chip specification rev. 2.2 january 2005 sl044022.doc / b public page 23 of 24 20 revision history table 1 chip specification sl1 ics30 01 revision history revisio n date cpcn page description 2.1 april 2000 previous version 2.2 jan. 2005 9 13 23 note regarding eas status added fail-die identification update wafer mapping format changed to ibis revision history established
philips semiconductors - a worldwide company published by: philips semiconductors gratkorn gmbh, mikron-weg 1, a-8101 gratkorn, austria, fax: +43 3124 299 270 for all other countries apply to : philips semiconductors, international marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax: +31 40 27 24825 internet: http://www.semiconductors.philips.com ? royal philips electronics n.v. 2000 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. argentina : see south america australia : 34 waterloo road, north ryde, nsw 2113, tel. +61 2 9805-4455, fax. +61 9 9805-4466 austria : computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 1 60 101, fax. +43 1 60 101 1210 belarus : hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 200 733, fax. +375 172 200 773 belgium : see the netherlands brazil : see south america bulgaria : philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 689 211, fax. +359 2 689 102 canada : see united states china/hong kong : 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, tel. +852 2811-9111, fax. +852 2811-9173 colombia : see south america czech republic : see austria denmark : frederikskaj, sydhavnsgade 23, dk-1780 copenhagen v, tel. +45 33 293333, fax. +45 33 293905 finland : sinikalliontie 3, fin-02630 espoo, tel. +358 9 615800, fax. +358 9 61580/xxx france : 51, rue carnot - bp317 92156 suresnes cedex, tel. +33 1 40 99 6161, fax. +33 1 40 996427 germany : hammerbrookstrabe 69, d-20097 hamburg, tel. +49 40 23 53 60, fax. +49 40 23 536 300 greece : no. 15, 25th march street, gr 17778 tavros/athens, tel. +30 1 4894 339/239, fax. +30 1 4814 240 hungary : see austria india : shivsagar estate, block 'a', dr. annie besant road, worli, mumbai-400 018, tel. +91 22 492-1365, fax. +91 22 493-8722 indonesia : gedung philips, jl. buncit raya kav. 99-100, jakarta 12510, tel. +62 21 794-0040, fax. +62 21 794-0080 ireland : newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel : rapac electronics, 7 kehilat saloniki st, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 648 1007 italy : philips semiconductors, piazza iv novembre 3, 20124 milano, tel. +39 2 6752 2531, fax. +39 2 6752 2557 japan : philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108-8507, tel. +81 3 3740-5130, fax. +81 3 3740-5057 korea : 260-199 itaewon-dong, yongsan-ku, seoul, korea c., p.o. box 3680, tel. +82 2 709-1412, fax. +82 2 709-1415 malaysia : 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 757 5214, fax. +60 3 757-4880 mexico : philips components, el paso, texas, tel. +1 915 772-4020 middle east : see italy netherlands : postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand : 2 wagener place, mt albert, c.p.o.box 1041, auckland, tel. +64 9 815-4144, fax. +64 9 849-7811 norway : box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 pakistan : see singapore philippines : 106 valero street, salcedo village, makati city, metro manila, tel. +63 2 816-6380, fax. +63 2 817-3474 poland : ul. lukiska 10, pl 04-123 warszawa, tel. +48 22 612 2831, fax. +48 22 612 2327 portugal : see spain romania : see italy russia : philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore : lorong one, toa payoh, singapore 319762, tel. +65 350-2538, fax. +65 251-6500/250-6010 slovakia : see austria slovenia : see italy south africa : s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 7430 johannesburg 2000, tel. +27 11 470 5911, fax. +27 11 470 5494 south america : al. vicente pinzon, 173 - 6th floor, 04547-130 sao paulo, sp - brazil, tel. +55 11 821 2333, fax. +55 11 829 1849 spain : balmes 22, 08007 barcelona, tel. +34 3 301 6312, fax. +34 3 301 4107 sweden : kottbygatan 7, akalla, s-16485 stockholm, tel. +46 8 598 520 00, fax. +46 8 632 2745 switzerland : allmendstrasse 140, ch-8027 zrich, tel. +41 1 488 2686, fax. +41 1 481 7730 taiwan r.o.c. : 6th floor, no. 96, chien kuo north road, sec.1, taipei, tel. +886 2 2134-2865, fax. +886 2 2134-2874 thailand : 209/2 sanpavuth-bangna road, prakanong, bangkok 10260, tel. +66 2 745-4090 x3261, fax. +66 2 398-0793 turkey : talatpasa cad. no. 5, 80640 gltepe/istanbul, tel. +90 212 279 2770, fax. +90 212 282 6707 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom : philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 181 730 5000, fax. +44 181 754 8421 united states : 811 east arques avenue, p.o. box 3409, sunnyvale, ca 94088-3409, tel. +800 234 7381, fax. +800 943 0087 uruguay : see south america vietnam : see singapore yugoslavia : philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 625 344, fax.+381 11 635 777


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